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SK Hynix’s new HBM2E semiconductor memory chips. (provided by SK Hynix)

SK Hynix has begun mass production of DRAM semiconductors that are fast enough to send 124HD films in a single second. The company announced the production of the new superfast semiconductor, called HBM23, was made on July 2.

Development of the new semiconductor was completed in August 2019. HBM23 can process 460 gigabytes of data each second using 1,024 I/Os (input/outputs) with a performance of 3.6 gigabits per second. This is the fastest DRAM solution thus far, capable of transmitting 124HD films in one second (assuming 3.7GB per film).

High-bandwidth memory (HBM) and a technique that connects upper and lower chips through thousands of tiny holes result in a product that’s 30% smaller while consuming 50% less energy. In short, it’s an ultrahigh-speed, high-capacity, and low-power chip.

The semiconductor is attracting interest as a memory solution for cutting-edge AI systems. Some potential applications are deep learning and next-generation supercomputers, both of which require high-performance and powerful computing.

“SK Hynix has been at the forefront of technology innovation that contributes to human civilization with achievements including the world’s first development of HBM products. With the full-scale mass production of HBM2E, we will continue to strengthen our presence in the premium memory market and lead the Fourth Industrial Revolution,” said Jonghoon Oh, executive vice president at SK Hynix.

By Koo Bon-kwon, senior staff writer

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